Before LVAD implant, 22 patients were Interagency Registry for Me

Before LVAD implant, 22 patients were Interagency Registry for Mechanically Assisted Circulatory Support (INTERMACS) level 1, and 17 were at level 2. Temporary mechanical assistance was present in 50% of the cohort at LVAD implantation. The 6-month survival/progression

to transplant was 92.5%. Average LVAD support time was 385 days (range, 21-1,011 days). RHF developed postoperatively in 13 of 40 patients (32.5%). RHF patients had more severe pre-operative tricuspid incompetence than non-RHF patients. The BTT patients with evidence of RHF had poorer survival to transplant (6 of 11 [54.5%]) than those without RHF (20 of 22 [90.9%]), p = 0.027). There were no other hemodynamic or echocardiographic predictors of short-term RHF. After LVAD, 22 of the 40 patients (55%) thrived clinically. For

BTT patients, 20 of 21 (95%) of those who thrived progressed to transplant selleck screening library or were alive at latest follow-up vs 6 of 12 (50%) of those who failed to thrive (FIT; p < 0.005). The thrivers had lower New York Heart Association class (1.5 vs 2.9, p < 0.001), spent less time in the hospital, and had less ventricular tachycardia than the FTT patients. However, no differences were noted in pre-operative INTERMACS level, echocardiographic, https://www.selleckchem.com/products/CAL-101.html hemodynamic, and biochemical indices, or in early post-operative RHF. Age was the only significant predictor: the thrivers were significantly younger (43.7 +/- 15.9 vs 60.3 +/- 12.6 years; p < 0.001). This age difference was unchanged after exclusion of destination strategy patients. RV function deteriorated in the patients and remained stable in those who thrived.

CONCLUSIONS: Early post-operative RHF results in poorer survival/progression to transplantation for BTT patients and is predicted by greater pre-operative tricuspid incompetence. The most important predictor for those who will clinically thrive longer-term after LVAD insertion is younger age. J Heart Lung Transplant 2011;30:888-95 LY3039478 order Crown Copyright (C) 2011 Published by Elsevier Inc. All rights reserved.”
“We conduct

a systematic investigation of the valence band offset Delta E(v) for amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si) using low-energy photoelectron spectroscopy in the constant final state mode. The dependence of Delta E(v) on a-Si:H thickness as well as on the possible combinations of c-Si substrate and a-Si:H film doping types are explored. Delta E(v) is found to be independent of both substrate and film doping and amounts to Delta E(v) = 0.458(6)eV, averaged over all doping combinations and thicknesses, with a systematic error of 50-60 meV. A slight but statistically significant dependency of Delta E(v) on the a-Si:H film thickness may be explained by a changing interface dipole due to variations in dangling bond saturation during a-Si:H growth. (C) 2011 American Institute of Physics. [doi:10.1063/1.

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